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www.irf.com 1 hexfet ? power mosfet v dss = 55v r ds(on) = 13.5m ? i d = 51a this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. s d g description logic level advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free features irlz44zpbf irlz44zspbf irlz44zlpbf d 2 pak irlz44zspbf to-220ab irlz44zpbf to-262 irlz44zlpbf absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v a i dm p u l se d d ra i n c urren t p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source volta g e v e as (thermally limited) si n gl e p u l se a va l anc h e e ner gy mj e as (tested ) si n gl e p u l se a va l anc h e e ner gy t es t e d v a l ue i ar a va l anc h e c urren t a e ar r epe titi ve a va l anc h e e ner gy mj t j operatin g junction and t stg stora g e temperature ran g ec soldering temperature, for 10 seconds mountin g tor q ue, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.87 c/w r cs case-to-sink, flat greased surface 0.50 ??? r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount) ??? 40 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1n m) 80 0.53 16 max. 51 36 204 110 78 see fig.12a, 12b, 15, 16 pd - 95539a

2 www.irf.com s d g el ectr i ca l ch aracter i st i cs @ t j = 2 5 c ( un l ess ot h erw i se spec ifi e d) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e55??????v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? 0.05 ??? v/c r ds(on) static drain-to-source on-resistance ??? 11 13.5 m ? 0 ? . ? ( 1.0 .0 0 0 00 00 . ( 1 ( 1 10 ( . (0.. . 10 0 10 0 10 . 0 source-drain ratin g s and characteristics parameter min. t y p. max. units i s continuous source current ??? ??? 51 (body diode) a i sm pulsed source current ??? ??? 204 ( bod y diode ) v sd diode forward volta g e??????1.3v t rr reverse recover y time ???2132ns q rr reverse recover y char g e ??? 16 24 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions v gs = 5.0v v gs = 0v v ds = 25v ? = 1.0mhz mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 31a, v gs = 0v t j = 25c, i f = 31a, v dd = 28v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 31a v ds = v gs , i d = 250a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c v gs = 0v, v ds = 0v to 44v v gs = 5.0v v dd = 50v i d = 31a r g = 7.5 ? v gs = 5.0v, i d = 30a v gs = 4.5v, i d = 15a v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 44v, ? = 1.0mhz v ds = 25v, i d = 31a i d = 31a v ds = 44v v gs = 16v v gs = -16v

www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0 1020304050 i d, drain-to-source current (a) 0 20 40 60 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 3.0v vgs top 15v 10v 8.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 3.0v vgs top 15v 10v 8.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs , gate-to-source voltage (v) 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 20v 60s pulse width t j = 25c t j = 175c

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1020304050 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v vds= 28v vds= 11v i d = 31a 0.2 0.6 1.0 1.4 1.8 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t j , junction temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.736 0.000345 0.687 0.00147 0.449 0.007058 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 5.0v

6 www.irf.com q g q gs q gd v g charge fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 80 160 240 320 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.7a 5.7a bottom 31a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a

www.irf.com 7 fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 31a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01

8 www.irf.com v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms fig 17.

for n-channel hexfet power mosfets

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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www.irf.com 9

note: "p" inass embly line position indicates "lead - free" line c we e k 19 part number dat e code ye ar 7 = 1997 ass embled on ww 19, 1997 this is an irf1010 example: in the assembly line "c" lot code 1789 international as s e mb l y lot code rectifier logo to-220ab packages are not recommended for surface mount application. notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

10 www.irf.com

dat e code ye ar 0 = 2000 wee k 02 a = as s e mb l y s i t e code rectifier int ernat ional part number p = designates lead - free product (optional) f530s in the assembly line "l" as s e mb le d on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly ye ar 0 = 2000 part numb e r dat e code line l week 02 or f 530s logo as s e mb l y lot code

notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

www.irf.com 11 to-262 part marking information to-262 package outline

logo rect ifier int e rnat ional lot code assembly logo rectifier int ernational dat e code we e k 19 ye ar 7 = 1997 part numbe r a = assembly site code or product (optional) p = de s ignat e s l e ad-f r e e e xample : t his is an ir l3103l lot code 1789 as s e mb l y part number dat e code week 19 line c lot code year 7 = 1997 as s emble d on ww 19, 1997 in the assembly line "c" notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

12 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/2010
repetitive rating; pulse width limited by max. junction temperature. (see fig. 11).
limited by t jmax , starting t j = 25c, l = 0.166mh r g = 25 ? , i as = 31a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. this is only applied to to-220ab pakcage. this is applied to d 2 pak, when mounted on 1" square pcb (fr- 4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.

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!" 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel infomation

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